weitron http://www.weitr o n.com.tw featu r es: application: * super high dense cell design for low r ds(on) r ds(on) <41m @v gs =4.5v r ds(on) <47m @v gs =2.5v r ds(on) <57m @v gs =1.8v * capable of 2.5v gate drive * rugged and reliable * lower on-resistance * power management in notebook computer. * portable equipment. * battery powered system. maximum ratings ( t a = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d ) rating symbo l v alue unit v d s 20 v v g s 3 4.9 ,v gs @4.5v(t a =70c) ,v gs @4.5v(t a =25c) i d 3.4 pulsed drain current 1 , 2 i d m 15 a total power dissipation(t a =25c) p d 0.75 w maximum junction-ambient 3 r ja 140 c / w operating junction temperature range t j t +150 -55~+150 c c device marking WTC2312=n12 WTC2312 n-channel enhancement mode power mosfet 2 source 3 drain 1 gate sot-23 1 2 3 1/6 lea d( p b ) - f r ee p b drain current 4.9 amperes drain souce voltage 20 voltage drain-source voltage gate-source voltage continuous drain current stg storage temperature range 8 rev.b 04-aug-09
WTC2312 weitron http://www.weitron . com.tw 2/6 rev.b 04-aug-09 electrical characteristics cha r a c t e r i st i c symbol m i n t yp m ax un i t drain-source breakdown voltage 100 (t =25c unless otherwise noted) a c iss c oss c rss v gs =0v, v ds =8v, f=1.0mhz v gs =0v, v ds =8v, f=1.0mhz v gs =0v, v ds =8v, f=1.0mhz s t atic v g s = 0 , i d v (br)dss 20 gate-source threshold voltage v d s = v g s , i d =250 a v g s(th) 0.4 v gate-source leakage current v g s = 8v i g s s - - na - - - 0.6 - 1.0 1 drain-source leakage current(t j =25?c) v d s =20v,v g s =0 i d s s drain-source on-resistance v g s =1.8v,i d =4.0a v g s =2.5v,i d =4.5a v g s =4.5v,i d =5.0a r ds(o n ) - - - 31 24 21 57 47 41 m forward transconductance v d s =10 v , i d =5.0a g f s - 40 - s dynamic input capacitance - - output capacitance - 300 500 140 reverse transfer capacitance - - - pf
WTC2312 a diode forward current i s - 1.7 - 3/6 rev.b 04-aug-09 weitron http://ww w .weit r on.com.tw switching t d ( on) - 15 25 t r - 40 t d ) - 48 31 70 t f - 45 ns q g - q g s - 1.4 11.2 2.2 - 60 - - - nc v sou r ce-drain diode characteristi c s forward on voltage 2 v gs =0 v , i s =1.7a v sd - - 1.2 note: v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v ds =10v, v gs =4.5v,i d =5a v ds =10v, v gs =4.5v,i d =5a v ds =10v, v gs =4.5v,i d =5a fall time rise time turn-on delay time 2 total gate charge 2 gate-source charge gate-drain change q gd 1. pulse width limited by max, junction temperature. 3. surface mounted on 1 in 2 copper pad of pcb board.
weitron http://ww w .weit r on.com.tw WTC2312 4/6 rev.b 04-aug-09 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of reverse diode fig 6. gate threshold voltage v.s. junction temperature 0 4 8 12 3 2 1 0 v ds , drain-to-source voltage (v) i d , d r a i n c u r r e n t ( a ) t a =25 o c v g =2.5v 5.0v 4.5v 3.5v 2.5v 0 4 8 12 3 2 1 0 v ds , drain-to-source voltage (v) i d , dr ai n c u rr e n t (a ) t a = 150 o c 5.0v 4.5v 3.5v 2.5v v g =2.5v 30 40 50 60 70 0 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds ( on) ( m?) 0.6 0.8 1.0 1.2 1.4 1.6 0 5 1 0 0 1 0 5 0 0 5 - t j , junction temperature ( oc) t j , junction temperature ( oc) n o r m a l i z e d r ds ( on) i d = 4 a v g =5v 0.2 0.6 1.0 1.4 1.8 0 5 1 0 0 1 0 5 0 0 5 - n o r m a l i z e d v gs ( th ) ( v ) 0.0 1.0 2.0 3.0 4.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s ( a ) t j =25 o c t j =150 o c i d =3a t a =25 o c
weitron http://ww w .weit r on.com.tw 5/6 rev.b 04-aug-09 fig 7. gate charge characteristic s fig 8. typical capacitance characteristics fig 9. maximum safe operating are a fig 10. effective transient thermal impedance fig 11. switching time circui t fig 12. gate charge circuit 0 2 4 6 8 10 12 0 2 4 6 8 10 q g , total gate charge (nc) v g s , gat e to s o u r ce v oltag e (v) i d =4a 10 100 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c ( p f) f =1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) nor m aliz e d t he r m al re spo n s e (r t h j a ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270oc /w t t 0.01 0.1 1 10 100 0 0 1 0 1 1 1 . 0 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse v ds =10v v ds =12v v ds =16v WTC2312
dim a b c d e g h j k l m m i n 0 . 3 5 1 . 1 9 2 . 1 0 0 . 8 5 0 . 4 6 1 . 7 0 2 . 7 0 0 . 0 1 0 . 8 9 0 . 3 0 0 . 0 7 6 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 a b d e g m l h j t op view k c sot -23 sot -23 outline dimension weitron http://ww w .weit r on.com.tw WTC2312 6/6 rev.b 04-aug-09
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